JAN1N6475 vs P6KE47A feature comparison

JAN1N6475 Microsemi Corporation

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P6KE47A Galaxy Microelectronics

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 43.7 V 44.7 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified
Reference Standard MIL-19500/552C
Rep Pk Reverse Voltage-Max 40.3 V 40.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 76
Part Package Code DO-15
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 49.4 V
Breakdown Voltage-Nom 47.05 V
Clamping Voltage-Max 64.8 V
JEDEC-95 Code DO-15
Operating Temperature-Max 175 °C
Operating Temperature-Min -50 °C
Peak Reflow Temperature (Cel) 260

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