JAN1N6475
vs
1N6475
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SEMTECH CORP
SEMTECH CORP
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
HERMETIC SEALED, GLASS PACKAGE-2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
HIGH RELIABILITY
Breakdown Voltage-Min
43.7 V
43.7 V
Breakdown Voltage-Nom
44 V
44 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
63.5 V
63.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/552
Rep Pk Reverse Voltage-Max
40 V
40 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
12
Compare JAN1N6475 with alternatives
Compare 1N6475 with alternatives