JAN1N6474US
vs
1N6474US
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROCHIP TECHNOLOGY INC
|
Reach Compliance Code |
unknown
|
compliant
|
Factory Lead Time |
29 Weeks
|
21 Weeks
|
Breakdown Voltage-Min |
33 V
|
33 V
|
Breakdown Voltage-Nom |
33 V
|
33 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
47.5 V
|
47.5 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LELF-N2
|
R-LELF-R2
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
3 W
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/552C
|
|
Rep Pk Reverse Voltage-Max |
30.5 V
|
30.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
NO LEAD
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
8
|
Rohs Code |
|
No
|
Package Description |
|
HERMETICALLY SEALED, GLASS, D-5C, MELF-2
|
JESD-609 Code |
|
e0
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare JAN1N6474US with alternatives
Compare 1N6474US with alternatives