JAN1N6474US
vs
JAN1N6474US
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROSS COMPONENTS
Part Package Code
MELF
Package Description
GLASS PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
Microsemi Corporation
Breakdown Voltage-Min
33 V
33 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-LELF-N2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/552C
MIL-19500/552C
Rep Pk Reverse Voltage-Max
30.5 V
30.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WRAP AROUND
NO LEAD
Terminal Position
END
END
Base Number Matches
1
1
Factory Lead Time
29 Weeks
Breakdown Voltage-Nom
33 V
Clamping Voltage-Max
47.5 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Compare JAN1N6474US with alternatives
Compare JAN1N6474US with alternatives