JAN1N6471 vs 1N6471.TR feature comparison

JAN1N6471 Semtech Corporation

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1N6471.TR Semtech Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer SEMTECH CORP SEMTECH CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min 13.6 V 13.6 V
Breakdown Voltage-Nom 13 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 22.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/552
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 1000 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 1
Pbfree Code No
Rohs Code No
JESD-609 Code e0
Terminal Finish TIN LEAD

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