JAN1N6468 vs P4KE56C feature comparison

JAN1N6468 Bkc Semiconductors Inc

Buy Now Datasheet

P4KE56C Yangzhou Yangjie Electronics Co Ltd

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer BKC SEMICONDUCTORS INC YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code unknown compliant
Additional Feature HIGH SURGE CAPABILITY
Breakdown Voltage-Min 54 V 50.4 V
Breakdown Voltage-Nom 55 V 56 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 78.5 V 80.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 1.5 W
Qualification Status Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 51.6 V 45.4 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 7 51
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 61.6 V

Compare JAN1N6468 with alternatives