JAN1N6466US
vs
1N6466USE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Package Description |
SURFACE MOUNT PACKAGE-2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-XELF-R2
|
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
2.5 W
|
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500/551C
|
|
| Rep Pk Reverse Voltage-Max |
30.5 V
|
30.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
PURE MATTE TIN
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Base Number Matches |
1
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
33 V
|
| Clamping Voltage-Max |
|
47.5 V
|
|
|
|
Compare JAN1N6466US with alternatives
Compare 1N6466USE3 with alternatives