JAN1N6466 vs JANTXV1N6469 feature comparison

JAN1N6466 Bkc Semiconductors Inc

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JANTXV1N6469 Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Additional Feature HIGH SURGE CAPABILITY
Breakdown Voltage-Min 33 V 5.6 V
Breakdown Voltage-Nom 33 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 47.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 3 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/516 MIL-19500/552C
Rep Pk Reverse Voltage-Max 30.5 V 5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 5

Compare JAN1N6466 with alternatives

Compare JANTXV1N6469 with alternatives