JAN1N6465
vs
1N6465E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Qualified
Reference Standard
MIL-19500/551C
IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max
24 V
24 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Rohs Code
Package Description
O-LALF-W2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
27 V
Breakdown Voltage-Nom
27 V
Clamping Voltage-Max
41.4 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Terminal Finish
PURE MATTE TIN
Compare JAN1N6465 with alternatives
Compare 1N6465E3 with alternatives