JAN1N6463 vs P6KE15AR0 feature comparison

JAN1N6463 Bkc Semiconductors Inc

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P6KE15AR0 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer BKC SEMICONDUCTORS INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
Additional Feature HIGH SURGE CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min 13.6 V 14.3 V
Breakdown Voltage-Nom 13.6 V 15 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 22.6 V 21.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 5 W
Qualification Status Not Qualified
Reference Standard MIL-19500/516 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 12 V 12.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 1
Package Description DO-15, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 15.8 V
JEDEC-95 Code DO-204AC
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

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