JAN1N6332US vs 1N6332USE3 feature comparison

JAN1N6332US Microsemi Corporation

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1N6332USE3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description MELF-2 O-LELF-R2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED HIGH RELIABILITY, METALLURGICALLY BONDED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 20 Ω 20 Ω
JESD-30 Code O-LELF-R2 O-LELF-R2
Knee Impedance-Max 500 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Reference Voltage-Nom 22 V 22 V
Reverse Current-Max 0.05 µA
Reverse Test Voltage 17 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Tol-Max 5% 5%
Working Test Current 5.6 mA 5.6 mA
Base Number Matches 1 1
Case Connection ISOLATED
Terminal Finish PURE MATTE TIN

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