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JAN1N6169A vs JANTX1N6169A feature comparison

JAN1N6169A Semicon Components Inc

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JANTX1N6169A Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE HIGH RELIABILITY
Breakdown Voltage-Min 123.5 V 123.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 6
Pbfree Code No
Rohs Code No
Package Description HERMETIC SEALED, GLASS, C PACKAGE-2
JESD-609 Code e0
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 98.8 V
Terminal Finish TIN LEAD
Diodes » Transient Suppressors
Diodes » Transient Suppressors

Compare JAN1N6169A with alternatives

Compare JANTX1N6169A with alternatives