JAN1N6167A
vs
JANTXV1N6167A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
HIGH RELIABILITY
Breakdown Voltage-Min
104.5 V
104.5 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
4
Rohs Code
Factory Lead Time
25 Weeks
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
86.6 V
Terminal Finish
TIN LEAD
Compare JAN1N6167A with alternatives
Compare JANTXV1N6167A with alternatives