JAN1N6165 vs JAN1N6061A feature comparison

JAN1N6165 Semtech Corporation

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JAN1N6061A Microsemi Corporation

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SEMTECH CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Min 82.175 V 77.9 V
Breakdown Voltage-Nom 91 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 131.355 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 7.5 W 1 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/516 MIL-19500
Rep Pk Reverse Voltage-Max 69.2 V 70 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 2
Pbfree Code No
Rohs Code No
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
Breakdown Voltage-Max 86.1 V
JEDEC-95 Code DO-202AA
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare JAN1N6165 with alternatives

Compare JAN1N6061A with alternatives