JAN1N6158US
vs
1N6158USE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
61.7 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Qualification Status |
Qualified
|
|
| Rep Pk Reverse Voltage-Max |
35.8 V
|
35.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
5
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
O-LELF-R2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Min |
|
42.47 V
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max |
|
3 W
|
| Reference Standard |
|
IEC-61000-4-2, 4-4, 4-5
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare JAN1N6158US with alternatives
Compare 1N6158USE3 with alternatives