JAN1N6156A
vs
1.5KE30C-GT3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSS COMPONENTS
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
O-PALF-W2
Reach Compliance Code
unknown
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
37.1 V
27 V
Breakdown Voltage-Nom
39 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
53.6 V
Configuration
COMMON CATHODE, 2 ELEMENTS
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
2
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
29.7 V
24.3 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
2
Rohs Code
Breakdown Voltage-Max
33 V
JEDEC-95 Code
DO-201AE
Moisture Sensitivity Level
1
Compare JAN1N6156A with alternatives
Compare 1.5KE30C-GT3 with alternatives