JAN1N6155
vs
JANTXV1N6155
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSS COMPONENTS
SEMICON COMPONENTS INC
Reach Compliance Code
unknown
unknown
Additional Feature
LOW IMPEDANCE
LOW IMPEDANCE
Breakdown Voltage-Min
32.49 V
32.49 V
Breakdown Voltage-Nom
36 V
36 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
52.395 V
52.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
7.5 W
7.5 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
27.4 V
27.4 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
6
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JAN1N6155 with alternatives
Compare JANTXV1N6155 with alternatives