JAN1N6153
vs
JAN1N6153
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSS COMPONENTS
Reach Compliance Code
compliant
unknown
Factory Lead Time
25 Weeks
Additional Feature
HIGH RELIABILITY
LOW IMPEDANCE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
7.5 W
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500/516
Rep Pk Reverse Voltage-Max
22.8 V
22.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
4
Breakdown Voltage-Min
27.075 V
Breakdown Voltage-Nom
30 V
Clamping Voltage-Max
43.68 V
Reverse Current-Max
5 µA
Compare JAN1N6153 with alternatives
Compare JAN1N6153 with alternatives