JAN1N6150AUS
vs
JANS1N6150AUS
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROSS COMPONENTS
MICROSS COMPONENTS
Reach Compliance Code
unknown
compliant
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
30.5 V
30.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Qualified
Rep Pk Reverse Voltage-Max
16.7 V
16.7 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
5
5
Additional Feature
TRAY
Breakdown Voltage-Min
20.9 V
Power Dissipation-Max
7.5 W
Reference Standard
MIL-19500; MIL-HDBK-5961
Reverse Current-Max
5 µA
Compare JAN1N6150AUS with alternatives
Compare JANS1N6150AUS with alternatives