JAN1N6137A
vs
P4KE200CA-G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
COMCHIP TECHNOLOGY CO LTD
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
190 V
Case Connection
ISOLATED
Clamping Voltage-Max
273 V
37.5 V
Configuration
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
152 V
171 V
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
8
3
Rohs Code
Samacsys Manufacturer
Comchip Technology
Breakdown Voltage-Nom
200 V
JEDEC-95 Code
DO-41
JESD-609 Code
e3
Terminal Finish
TIN
Compare JAN1N6137A with alternatives
Compare P4KE200CA-G with alternatives