JAN1N6136
vs
JAN1N6136
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSS COMPONENTS
|
| Reach Compliance Code |
compliant
|
unknown
|
| Breakdown Voltage-Min |
162.45 V
|
171 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
e2
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
1.5 W
|
| Qualification Status |
Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
TIN COPPER
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
4
|
| Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Factory Lead Time |
|
29 Weeks
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Breakdown Voltage-Nom |
|
180 V
|
| Clamping Voltage-Max |
|
257.985 V
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reference Standard |
|
MIL-19500/516
|
| Rep Pk Reverse Voltage-Max |
|
136.8 V
|
| Reverse Current-Max |
|
1 µA
|
|
|
|
Compare JAN1N6136 with alternatives
Compare JAN1N6136 with alternatives