JAN1N6133A
vs
BZW06-111
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMICON COMPONENTS INC
STMICROELECTRONICS
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
123.5 V
124 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
178.8 V
230 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
1.7 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
UL RECOGNIZED
Reverse Current-Max
1 µA
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
4
Rohs Code
Package Description
PLASTIC, F126, 2 PIN
Pin Count
2
Breakdown Voltage-Max
137 V
Breakdown Voltage-Nom
130 V
Diode Capacitance-Min
420 pF
JESD-609 Code
e3
Rep Pk Reverse Voltage-Max
111 V
Terminal Finish
MATTE TIN
Compare JAN1N6133A with alternatives
Compare BZW06-111 with alternatives