JAN1N6133A vs BZW04P111 feature comparison

JAN1N6133A Semicon Components Inc

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BZW04P111 STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMICON COMPONENTS INC STMICROELECTRONICS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 123.5 V 124 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 178.8 V 230 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 1.7 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 UL RECOGNIZED
Reverse Current-Max 1 µA 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 4
Rohs Code No
Breakdown Voltage-Max 143 V
Breakdown Voltage-Nom 130 V
Diode Capacitance-Min 165 pF
Rep Pk Reverse Voltage-Max 111 V

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