JAN1N6126A
vs
1N6126AE3
feature comparison
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROSEMI CORP
|
Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
O-LALF-W2
|
Reach Compliance Code |
unknown
|
compliant
|
Factory Lead Time |
29 Weeks
|
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Breakdown Voltage-Min |
64.6 V
|
64.6 V
|
Breakdown Voltage-Nom |
68 V
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
97.1 V
|
|
Configuration |
COMMON CATHODE, 2 ELEMENTS
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e2
|
e3
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
2
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
-55 °C
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
1.5 W
|
2 W
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500/516
|
|
Rep Pk Reverse Voltage-Max |
51.7 V
|
51.7 V
|
Reverse Current-Max |
1 µA
|
|
Surface Mount |
NO
|
NO
|
Technology |
ZENER
|
AVALANCHE
|
Terminal Finish |
TIN COPPER
|
MATTE TIN
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
9
|
1
|
Rohs Code |
|
Yes
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.50
|
|
|
|
Compare JAN1N6126A with alternatives
Compare 1N6126AE3 with alternatives