JAN1N6121A
vs
1N6121A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROSS COMPONENTS
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code
unknown
unknown
Factory Lead Time
29 Weeks
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
40.9 V
40.9 V
Breakdown Voltage-Nom
43 V
Case Connection
ISOLATED
Clamping Voltage-Max
59.1 V
Configuration
COMMON CATHODE, 2 ELEMENTS
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
E-XALF-W2
JESD-609 Code
e2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
2
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
Qualification Status
Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
32.7 V
32.7 V
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Finish
TIN COPPER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
11
Compare JAN1N6121A with alternatives