JAN1N6120US
vs
1N6120US
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
37.1 V
35.25 V
Breakdown Voltage-Nom
39 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
56.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MELF-R2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
2 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
29.7 V
29.7 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
5
Rohs Code
Package Description
HERMETIC SEALED, GLASS, D-5B, E-MELF-2
Factory Lead Time
21 Weeks
Additional Feature
HIGH RELIABILITY
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JAN1N6120US with alternatives
Compare 1N6120US with alternatives