JAN1N6116A
vs
1N6116A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
BKC SEMICONDUCTORS INC
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
24.3 V
25.7 V
Breakdown Voltage-Nom
27 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
39.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
2 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
20.6 V
20.6 V
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
13
Pbfree Code
Package Description
HERMETIC SEALED, GLASS, B PACKAGE-2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Compare JAN1N6116A with alternatives
Compare 1N6116A with alternatives