JAN1N6116
vs
JANS1N6116
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
24.3 V
25.7 V
Breakdown Voltage-Nom
27 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
39.1 V
39.27 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
20.6 V
20.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
4
Rohs Code
Package Description
HERMETIC SEALED, GLASS, E PACKAGE-2
Factory Lead Time
32 Weeks
Additional Feature
HIGH RELIABILITY
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
2 W
Reference Standard
MIL-19500/516
Reverse Current-Max
1 µA
Terminal Finish
TIN LEAD
Compare JAN1N6116 with alternatives
Compare JANS1N6116 with alternatives