JAN1N6116 vs JANS1N6116 feature comparison

JAN1N6116 Microchip Technology Inc

Buy Now Datasheet

JANS1N6116 Microchip Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 25 Weeks 32 Weeks
Additional Feature LOW IMPEDANCE HIGH RELIABILITY
Breakdown Voltage-Min 24.3 V 25.7 V
Breakdown Voltage-Nom 27 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 39.1 V 39.27 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.5 W 2 W
Qualification Status Qualified Qualified
Reference Standard MIL-19500/516 MIL-19500/516
Rep Pk Reverse Voltage-Max 20.6 V 20.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 4
Package Description HERMETIC SEALED, GLASS, E PACKAGE-2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 1 µA

Compare JAN1N6116 with alternatives

Compare JANS1N6116 with alternatives