JAN1N6116
vs
JANS1N6116
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Factory Lead Time
25 Weeks
32 Weeks
Additional Feature
LOW IMPEDANCE
HIGH RELIABILITY
Breakdown Voltage-Min
24.3 V
25.7 V
Breakdown Voltage-Nom
27 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
39.1 V
39.27 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
2 W
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500/516
MIL-19500/516
Rep Pk Reverse Voltage-Max
20.6 V
20.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
4
Package Description
HERMETIC SEALED, GLASS, E PACKAGE-2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
1 µA
Compare JAN1N6116 with alternatives
Compare JANS1N6116 with alternatives