JAN1N6115A
vs
JANTX1N6115
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
SEMICON COMPONENTS INC
|
BKC SEMICONDUCTORS INC
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Breakdown Voltage-Min |
22.8 V
|
21.6 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
33.3 V
|
34.8 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
UNSPECIFIED
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/516
|
|
Reverse Current-Max |
1 µA
|
1 µA
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
9
|
9
|
Rohs Code |
|
No
|
Breakdown Voltage-Nom |
|
24 V
|
JESD-609 Code |
|
e0
|
Rep Pk Reverse Voltage-Max |
|
18.2 V
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare JAN1N6115A with alternatives