JAN1N6111
vs
P6KE110
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
14.44 V
99 V
Breakdown Voltage-Nom
16 V
110 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
23.415 V
158 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
12 V
89.2 V
Reverse Current-Max
20 µA
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
70
Package Description
DO-15, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY, Bulk; 500
Breakdown Voltage-Max
121 V
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-204AC
Reverse Test Voltage
89.2 V
Compare JAN1N6111 with alternatives
Compare P6KE110 with alternatives