JAN1N6107A
vs
P6KE110
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
GENERAL INSTRUMENT CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Date Of Intro
1999-07-20
Breakdown Voltage-Min
10.45 V
99 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
15.6 V
158 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
8.4 V
Reverse Current-Max
20 µA
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
4
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Max
121 V
Breakdown Voltage-Nom
110 V
JEDEC-95 Code
DO-15
Power Dissipation-Max
5 W
Compare JAN1N6107A with alternatives
Compare P6KE110 with alternatives