JAN1N6106A
vs
1N6106A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SEMTECH CORP
MICROCHIP TECHNOLOGY INC
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
HERMETIC SEALED, GLASS, B PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
SEMTECH
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
9.5 V
9.5 V
Breakdown Voltage-Nom
10 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
14.5 V
Configuration
COMMON CATHODE, 2 ELEMENTS
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e2
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
2
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
2 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
7.6 V
7.6 V
Reverse Current-Max
20 µA
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Finish
TIN COPPER
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
10
Rohs Code
Factory Lead Time
21 Weeks
Compare JAN1N6106A with alternatives
Compare 1N6106A with alternatives