JAN1N6073
vs
1N6073HR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
DIGITRON SEMICONDUCTORS
Package Description
HERMETIC SEALED, GLASS, A, 2 PIN
Reach Compliance Code
unknown
unknown
Additional Feature
METALLURGICALLY BONDED, HIGH RELIABILITY
HIGH RELIABILITY
Application
ULTRA FAST RECOVERY POWER
ULTRA FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
O-LALF-W2
O-XALF-W2
JESD-609 Code
e0
e0
Non-rep Pk Forward Current-Max
35 A
35 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
3 A
3 A
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Qualified
Reference Standard
MIL-19500/503
MIL-19500
Reverse Recovery Time-Max
0.03 µs
0.03 µs
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
5
1
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.80
Forward Voltage-Max (VF)
2.04 V
Operating Temperature-Max
155 °C
Operating Temperature-Min
-65 °C
Rep Pk Reverse Voltage-Max
50 V
Reverse Current-Max
1 µA
Compare JAN1N6073 with alternatives
Compare 1N6073HR with alternatives