JAN1N6072A
vs
1N6072A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
231 V
231 V
Breakdown Voltage-Min
209 V
209 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/500
Rep Pk Reverse Voltage-Max
185 V
185 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
16
Pbfree Code
Rohs Code
Part Package Code
DO-13
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count
2
Samacsys Manufacturer
Microsemi Corporation
Breakdown Voltage-Nom
220 V
Clamping Voltage-Max
328 V
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Terminal Finish
TIN LEAD
Compare JAN1N6072A with alternatives
Compare 1N6072A with alternatives