JAN1N6072A
vs
1N6072A
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
SILICON TRANSISTOR CORP
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Breakdown Voltage-Max |
231 V
|
231 V
|
Breakdown Voltage-Min |
209 V
|
209 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-13
|
DO-202AA
|
JESD-30 Code |
O-MALF-W2
|
O-MALF-W2
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
1 W
|
1 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/500
|
|
Rep Pk Reverse Voltage-Max |
185 V
|
185 V
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
6
|
16
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Part Package Code |
|
DO-13
|
Package Description |
|
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
Pin Count |
|
2
|
Samacsys Manufacturer |
|
Microsemi Corporation
|
Breakdown Voltage-Nom |
|
220 V
|
Clamping Voltage-Max |
|
328 V
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare JAN1N6072A with alternatives
Compare 1N6072A with alternatives