JAN1N6072A vs 1N6072A feature comparison

JAN1N6072A Silicon Transistor Corporation

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1N6072A Microsemi Corporation

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SILICON TRANSISTOR CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 231 V 231 V
Breakdown Voltage-Min 209 V 209 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-202AA
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/500
Rep Pk Reverse Voltage-Max 185 V 185 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 16
Pbfree Code No
Rohs Code No
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
Samacsys Manufacturer Microsemi Corporation
Breakdown Voltage-Nom 220 V
Clamping Voltage-Max 328 V
JESD-609 Code e0
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Terminal Finish TIN LEAD

Compare JAN1N6072A with alternatives

Compare 1N6072A with alternatives