JAN1N6071A
vs
1N6070AE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
MICROSEMI CORP
|
| Package Description |
DO-13, 2 PIN
|
O-MALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Max |
210 V
|
200 V
|
| Breakdown Voltage-Min |
190 V
|
181 V
|
| Case Connection |
ANODE
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-13
|
DO-202AA
|
| JESD-30 Code |
O-XALF-W2
|
O-MALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
UNSPECIFIED
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500/507D
|
|
| Rep Pk Reverse Voltage-Max |
170 V
|
160 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
190 V
|
| Clamping Voltage-Max |
|
278 V
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare JAN1N6071A with alternatives
Compare 1N6070AE3 with alternatives