JAN1N6070A vs JANTX1N6070A feature comparison

JAN1N6070A Silicon Transistor Corporation

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JANTX1N6070A Microchip Technology Inc

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Part Life Cycle Code Transferred Active
Ihs Manufacturer SILICON TRANSISTOR CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 200 V 200 V
Breakdown Voltage-Min 181 V 181 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-202AA
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/500 MIL-19500
Rep Pk Reverse Voltage-Max 160 V 160 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 6
Rohs Code No
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
JESD-609 Code e0
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Terminal Finish TIN LEAD

Compare JAN1N6070A with alternatives

Compare JANTX1N6070A with alternatives