JAN1N6036A vs 1N6036A feature comparison

JAN1N6036A Silicon Transistor Corporation

Buy Now Datasheet

1N6036A Baneasa SA

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer SILICON TRANSISTOR CORP BANEASA S A
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 7.88 V 7.88 V
Breakdown Voltage-Min 7.13 V 7.13 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-13
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/500
Rep Pk Reverse Voltage-Max 6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1

Compare JAN1N6036A with alternatives

Compare 1N6036A with alternatives