JAN1N5822
vs
1N5822
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
COMPENSATED DEVICES INC
|
MICRO QUALITY SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
|
| Application |
GENERAL PURPOSE
|
VERY FAST RECOVERY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/620
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
5
|
87
|
| Rohs Code |
|
No
|
| Forward Voltage-Max (VF) |
|
0.95 V
|
| JESD-609 Code |
|
e0
|
| Non-rep Pk Forward Current-Max |
|
80 A
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Rep Pk Reverse Voltage-Max |
|
40 V
|
| Reverse Current-Max |
|
2000 µA
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|