JAN1N5809US vs JANS1N5809US feature comparison

JAN1N5809US Microsemi Corporation

Buy Now Datasheet

JANS1N5809US Bkc Semiconductors Inc

Buy Now Datasheet
Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP BKC SEMICONDUCTORS INC
Package Description HERMETIC SEALED, GLASS, D-5B, 2 PIN
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY HIGH SURGE CAPABILITY
Application ULTRA FAST RECOVERY FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V 0.875 V
JESD-30 Code O-LELF-R2 O-MELF-R2
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 3 A 6 A
Package Body Material GLASS METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/477 MIL-19500/477
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 1

Compare JAN1N5809US with alternatives

Compare JANS1N5809US with alternatives