JAN1N5809 vs RGP30B feature comparison

JAN1N5809 Bkc Semiconductors Inc

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RGP30B General Instrument Corp

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer BKC SEMICONDUCTORS INC GENERAL INSTRUMENT CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application FAST RECOVERY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V 1.3 V
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 6 A 3 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/477
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.03 µs 0.15 µs
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 11 22
Additional Feature PATENTED DEVICE
JEDEC-95 Code DO-201AD
Operating Temperature-Min -65 °C

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