JAN1N5806URS
vs
SFT13GHB0G
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
160 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-PALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.035 µs
|
| Reverse Test Voltage |
150 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Base Number Matches |
3
|
1
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare JAN1N5806URS with alternatives
Compare SFT13GHB0G with alternatives