JAN1N5806
vs
1N5806-PBF
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
SEMTECH CORP
|
DIGITRON SEMICONDUCTORS
|
Package Description |
G111, 2 PIN
|
|
Pin Count |
2
|
|
Manufacturer Package Code |
G111
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
|
Samacsys Manufacturer |
SEMTECH
|
|
Application |
SUPER FAST RECOVERY
|
EFFICIENCY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.875 V
|
0.975 V
|
JESD-30 Code |
O-LALF-W2
|
O-XALF-W2
|
Non-rep Pk Forward Current-Max |
35 A
|
35 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Output Current-Max |
3.3 A
|
2.5 A
|
Package Body Material |
GLASS
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500/477
|
|
Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
Reverse Current-Max |
1 µA
|
1 µA
|
Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
Yes
|
Breakdown Voltage-Min |
|
160 V
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Reverse Test Voltage |
|
150 V
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JAN1N5806 with alternatives
Compare 1N5806-PBF with alternatives