JAN1N5804US
vs
JANS1N5804US
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
BKC SEMICONDUCTORS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
ULTRA FAST RECOVERY POWER
FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.875 V
0.875 V
JESD-30 Code
O-LELF-R2
O-MELF-R2
Non-rep Pk Forward Current-Max
35 A
35 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Output Current-Max
2.5 A
2.5 A
Package Body Material
GLASS
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/477F
MIL-19500/477
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Recovery Time-Max
0.025 µs
0.025 µs
Surface Mount
YES
YES
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
1
JESD-609 Code
e0
Power Dissipation-Max
3 W
Terminal Finish
TIN LEAD
Compare JAN1N5804US with alternatives
Compare JANS1N5804US with alternatives