JAN1N5657A
vs
JANTX1N5657A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
105 V
105 V
Breakdown Voltage-Min
95 V
95 V
Breakdown Voltage-Nom
100 V
100 V
Case Connection
ISOLATED
CATHODE
Clamping Voltage-Max
137 V
137 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-MALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/500
MIL-19500
Rep Pk Reverse Voltage-Max
86 V
85.5 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Factory Lead Time
21 Weeks
JEDEC-95 Code
DO-202AA
Compare JAN1N5657A with alternatives
Compare JANTX1N5657A with alternatives