JAN1N5656A vs JANTX1N5556 feature comparison

JAN1N5656A Semicon Components Inc

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JANTX1N5556 Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMICON COMPONENTS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 95.5 V
Breakdown Voltage-Min 86.5 V 43.7 V
Breakdown Voltage-Nom 91 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 125 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/500 MIL-19500/500
Rep Pk Reverse Voltage-Max 78 V 40.3 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Package Description HERMETIC SEALED, METAL, DO-13, 2 PIN
JEDEC-95 Code DO-202AA

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