JAN1N5649ATR
vs
JAN1N5649A
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
SILICON TRANSISTOR CORP
|
Part Package Code |
DO-13
|
|
Package Description |
O-MALF-W2
|
|
Pin Count |
2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Breakdown Voltage-Max |
49.4 V
|
49.4 V
|
Breakdown Voltage-Min |
44.7 V
|
44.7 V
|
Breakdown Voltage-Nom |
47.05 V
|
|
Case Connection |
CATHODE
|
ISOLATED
|
Clamping Voltage-Max |
64.8 V
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-202AA
|
DO-13
|
JESD-30 Code |
O-MALF-W2
|
O-MALF-W2
|
JESD-609 Code |
e0
|
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
1 W
|
1 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500
|
MIL-19500/500
|
Rep Pk Reverse Voltage-Max |
40.2 V
|
40.2 V
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
1
|
7
|
|
|
|
Compare JAN1N5649ATR with alternatives
Compare JAN1N5649A with alternatives