JAN1N5645A
vs
JANTX1N5645A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SEMICON COMPONENTS INC
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code
compliant
unknown
Breakdown Voltage-Max
34.7 V
34.7 V
Breakdown Voltage-Min
31.4 V
31.4 V
Breakdown Voltage-Nom
33.05 V
33 V
Case Connection
CATHODE
ISOLATED
Clamping Voltage-Max
45.7 V
45.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-202AA
JESD-30 Code
O-MALF-W2
O-XALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
MIL-19500/500
Rep Pk Reverse Voltage-Max
28.2 V
28 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
Compare JAN1N5645A with alternatives
Compare JANTX1N5645A with alternatives