JAN1N5635ATR vs 1N5635A feature comparison

JAN1N5635ATR Microsemi Corporation

Buy Now Datasheet

1N5635A Digitron Semiconductors

Buy Now Datasheet
Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP DIGITRON SEMICONDUCTORS
Part Package Code DO-13
Package Description O-MALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 12.6 V 12.6 V
Breakdown Voltage-Min 11.4 V 11.4 V
Case Connection CATHODE ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA DO-13
JESD-30 Code O-MALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 15
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 16.7 V
Reverse Current-Max 5 µA
Reverse Test Voltage 10.2 V

Compare JAN1N5635ATR with alternatives