JAN1N5557
vs
SA45A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
54 V
50 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-204AC
JESD-30 Code
O-MALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
3 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/500
Rep Pk Reverse Voltage-Max
49 V
45 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
8
57
Rohs Code
Breakdown Voltage-Max
55.3 V
Breakdown Voltage-Nom
52.65 V
Clamping Voltage-Max
72.7 V
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